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TSMC and ASML Partner to Deploy 12-inch High NA EUV Lithography by 2030
Electronic Technology · Semiconductors · cnyes · 2026-09-08
2330
TSMC and ASML have announced a strategic collaboration to transition to 12-inch photomasks for High NA EUV technology by 2030, aiming to boost production efficiency.
What Happened
Technological Roadmap: TSMC has announced plans to integrate ASML's High NA EUV technology into its advanced manufacturing processes starting in 2030. A key component of this transition involves doubling the photomask size from the current 6 inches to 12 inches to improve productivity and reduce manufacturing costs.
Ecosystem Collaboration: ASML CEO Christophe Fouquet noted that the industry-wide shift is essential to meet the growing demand for faster and more energy-efficient chips. The companies aim to establish a 12-inch pilot line by 2031, setting the stage for full-scale production integration by 2033.
AI-Driven Demand: As AI applications drive increasing complexity in transistor architectures, TSMC anticipates a rise in the number of layers requiring High NA EUV exposure. The move to larger 12-inch masks will eliminate current stitching limitations, providing a more scalable solution for future chip generations.
Strategic Vision: TSMC Chairman C.C. Wei emphasized that collaborative innovation across the semiconductor supply chain is vital to overcoming technical barriers. This partnership underscores TSMC's commitment to making advanced manufacturing solutions more accessible and efficient for the broader industry.